Applied Materials Unveils Advanced Systems for 2nm and Beyond Logic Chips
Applied Materials, Inc., a global leader in materials engineering for the semiconductor industry, has announced a suite of new deposition, etch, and materials modification systems designed to enhance the performance of next-generation logic chips at the 2nm node and beyond. These innovations are set to drive significant improvements in AI computing by enabling atomic-scale advancements in transistor technology—the fundamental building block of modern electronics.
Enabling the Gate-All-Around (GAA) Transistor Revolution
The semiconductor industry is undergoing a pivotal transition to Gate-All-Around (GAA) transistors, a breakthrough architecture that is essential for achieving the energy-efficient computing required by advanced AI applications. As 2nm-class GAA chips enter volume production, Applied Materials is introducing new material engineering solutions that optimize GAA transistors for angstrom-scale nodes. These new systems collectively deliver a substantial portion of the energy-efficient performance gains associated with GAA process node advancements.
According to Dr. Prabu Raja, President of the Semiconductor Products Group at Applied Materials, “Breakthroughs in computing start with the transistor. Our latest materials engineering innovations are designed to improve energy-efficient compute and help customers accelerate their chip development roadmaps to meet the rapidly evolving demands of AI.”
Viva Radical Treatment System: Precision Engineering for Nanosheet Surfaces
At the core of GAA transistors are horizontal stacks of nanosheets—ultra-thin silicon layers just a few nanometers wide. The surface quality of these nanosheets is critical, as even atomic-scale imperfections can degrade electrical performance and overall chip efficiency. Achieving pristine, uniform nanosheet surfaces enhances electron mobility, enabling transistors to switch faster and consume less power—key requirements for next-generation AI chips.
The Applied Producer Viva radical treatment system delivers angstrom-level precision in engineering nanosheet surfaces. Utilizing a patented delivery architecture, Viva generates ultrapure radical species through a remote plasma source and advanced hardware that filters out high-energy ions, preventing surface damage. This approach ensures gentle, uniform surface treatments, even in deeply buried transistor structures.
Leading logic chipmakers are adopting the Viva system for advanced channel engineering at 2nm and beyond. Additionally, when paired with the Applied Producer Pyra thermal annealing process, Viva’s radical treatment further reduces the resistance of copper interconnects, supporting the continued use of copper in advanced process nodes.
Sym3 Z Magnum Etch System: Angstrom-Level 3D Trench Formation
The vertical 3D architecture of GAA transistors requires the creation of deep, narrow trenches with exceptional precision. Uniform depth, straight sidewalls, and flat bottoms are essential to maintain transistor speed, power efficiency, and overall performance. As process nodes shrink, advanced plasma etch technology becomes increasingly vital.
The new Centris Sym3 Z Magnum etch system builds on the success of the Sym3 Z platform, which introduced pulsed voltage technology (PVT) for high-volume production. The latest Sym3 Z Magnum features second-generation pulsed voltage technology (PVT2), enabling independent control of ion angle and energy. This advancement allows for highly defined ion trajectories, resulting in clean, precise trenches that support uniform nanosheet formation, faster transistor switching, and superior epitaxy quality.
Sym3 Z Magnum’s capabilities extend beyond logic to DRAM and high-bandwidth memory (HBM) technologies, enabling denser arrays and taller stacks. Its broad applicability is driving rapid adoption among leading chipmakers, reinforcing Applied Materials’ leadership in advanced etch solutions.
Spectral ALD System: Reducing Contact Resistance with Molybdenum
As chip scaling advances below 2nm, the metal contacts connecting transistors to wiring networks become increasingly thin, making contact resistance a critical factor in overall chip performance and energy efficiency. Traditional tungsten contacts face limitations at these dimensions, prompting the industry to explore alternatives.
The Applied Centris Spectral Molybdenum ALD system addresses this challenge by selectively depositing monocrystalline molybdenum, which can be made thinner than tungsten while maintaining efficient electron flow. This innovation reduces contact resistance by up to 15% compared to the industry-standard Applied Endura Volta Selective Tungsten system, supporting higher performance and energy efficiency in advanced AI chips.
The Spectral ALD system features a state-of-the-art quad reactor design, precision chemical delivery, and a range of plasma and thermal processing capabilities. Its specialized hardware supports both temporal and spatial ALD operations, enabling the creation of advanced films for next-generation semiconductor devices. Leading logic chipmakers are already adopting the Spectral system for 2nm and sub-2nm process nodes.
Driving the Future of AI and Semiconductor Innovation
Applied Materials’ latest systems represent significant advancements in materials engineering, supporting the continued evolution of logic chips at the angstrom scale. By enabling more precise transistor structures, lower resistance interconnects, and advanced material integration, these technologies are poised to accelerate the development of high-performance, energy-efficient AI chips for the next era of computing.
